Two-dimensional modeling of self-aligned silicide process with a general-purpose process simulater
نویسندگان
چکیده
INTRODUCTION In order to reduce source/drain resistance with shallower junction, self-aligned silicide(sa1icide) process was developed and is finding more applications to MOSFETs. Now, MOSFET process simulation including salicide process is a necessity. However, there have been few reports on salicide simulation mainly because the implement of 2D model is very difficult. We have developed a 2D salicide process model in a generalpurpose process simulator OPUS[l]. An analytical model which takes the device topography into account is developed for reaction of metal and Si, The thorough 2D simulation of MOSFET process could be one of the first to be reported ever. MODELS The growth model of silicide is schematically shown in fig.1. Silicide growth due to metal-Si reaction is based on the following equation[2]:
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